ELECTROLUMINESCENCE FROM A HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：8

作者：

HAYES, JR ^{[1
]}

LEHENY, RF ^{[1
]}

TEMKIN, H ^{[1
]}

GOSSARD, AC ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：537 / 539

页数：3

共 6 条

[1] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J].

BENEKING, H ;

SU, LM .

ELECTRONICS LETTERS, 1982, 18 (01) :25-26

[2] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[3] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE [J].

HAYES, JR ;

CAPASSO, F ;

GOSSARD, AC ;

MALIK, RJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1983, 19 (11) :410-411

[4] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11) :1535-1537

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

SU, SL ;

TEJAYADI, O ;

DRUMMOND, TJ ;

FISCHER, R ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :130-132

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