SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER

被引：71

作者：

NAGATA, K

NAKAJIMA, O

YAMAUCHI, Y

NITTONO, T

ITO, H

ISHIBASHI, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/16.2408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2 / 7

页数：6

共 14 条

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[3] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].

CHANG, MF ;

ASBECK, PM ;

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[4]

Ishibashi T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P809

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[6]

NAGATA K, 1986, I PHYS C SER, V79, P589

[7] SUPPRESSION OF EMITTER SIZE EFFECT ON CURRENT GAIN IN ALGAAS/GAAS HBTS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

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[8]

Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[9] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J].

NITTONO, T ;

ITO, H ;

NAKAJIMA, O ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L865-L867

[10] AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER [J].

RAO, MA ;

CAINE, EJ ;

LONG, SI ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :30-32

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