AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE

被引：24

作者：

CHANG, MF

ASBECK, PM

WANG, KC

SULLIVAN, GJ

MILLER, DL

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 22期

关键词：

D O I：

10.1049/el:19860803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1173 / 1174

页数：2

相关论文

共 5 条

[1] ASBECK PM, 1984, IEEE ELECTRON DEVICE, V5
[2] CHANG MF, 1986, FEB WOCSMAD C SAN FR
[3] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION
DUMKE, WP
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[4] REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE
FISCHER, R
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 359 - 362
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25