REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE

被引:20
作者
FISCHER, R
MORKOC, H
机构
关键词
D O I
10.1109/EDL.1986.26400
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:359 / 362
页数:4
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