AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER

被引：26

作者：

RAO, MA

CAINE, EJ

LONG, SI

KROEMER, H

机构：

来源：

关键词：

D O I：

10.1109/EDL.1987.26540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：30 / 32

页数：3

共 14 条

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