ANALYSIS AND SCALING OF KELVIN RESISTORS FOR EXTRACTION OF SPECIFIC CONTACT RESISTIVITY

被引：55

作者：

LOH, WM

SARASWAT, K

DUTTON, RW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 03期

关键词：

D O I：

10.1109/EDL.1985.26061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：105 / 108

页数：4

相关论文

共 5 条

[1] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS
CHERN, JGJ
OLDHAM, WG
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180
[2] GEOMETRICAL EFFECTS IN CONTACT RESISTANCE MEASUREMENTS - FINITE-ELEMENT MODELING AND EXPERIMENTAL RESULTS
NATAN, M
PURUSHOTHAMAN, S
DOBROWOLSKI, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5776 - 5782
[3] PINTO MR, 1984, PISCES 2 POISSON CON
[4] DIRECT MEASUREMENTS OF INTERFACIAL CONTACT RESISTANCE, END CONTACT RESISTANCE, AND INTERFACIAL CONTACT LAYER UNIFORMITY
PROCTOR, SJ
LINHOLM, LW
MAZER, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1535 - 1542
[5] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS
SCOTT, DB
HUNTER, WR
SCHICHIJO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661