DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS

被引：48

作者：

CHERN, JGJ ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：178 / 180

页数：3

相关论文

共 8 条

[1] CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &
[2] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
FANG, YK
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[4] SIZE EFFECT ON CONTACT RESISTANCE AND DEVICE SCALING
COHEN, SS
GILDENBLAT, G
BROWN, DM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 978 - 980
[5] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION
LIU, TM
OLDHAM, WG
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 275 - 277
[6] A DIRECT MEASUREMENT OF INTERFACIAL CONTACT RESISTANCE
PROCTOR, SJ
LINHOLM, LW
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 294 - 296
[7] SHOCKLEY W, 1964, ALTOR64207 AIR FORC
[8] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS
YU, AYC
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 239 - +