SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION

被引：10

作者：

LIU, TM

OLDHAM, WG

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 10期

关键词：

D O I：

10.1109/EDL.1981.25430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：275 / 277

页数：3

相关论文

共 10 条

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