FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &

[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &

[3] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[4] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1303 - &

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04): : 588 - &

[7] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[8] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[9] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[10] Frenkel J., 1945, J PHYS-USSR, V9, P392

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &

[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &

[3] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[4] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1303 - &

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04): : 588 - &

[7] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[8] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[9] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[10] Frenkel J., 1945, J PHYS-USSR, V9, P392