STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS

被引：34

作者：

DRUM, CM

VANGELDE.W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 11期

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D O I：

10.1063/1.1660944

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：4465 / &

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