DIFFUSION PIPES IN SILICON NPN STRUCTURES

[1] ARMSTRONG WJ, 1966, ELECTROCHEM TECHNOL, V4, P475

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) : 604 - 607

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &

[6] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 796 - &

[7] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[8] PAVLOV PV, 1964, SOV PHYS-SOL STATE, V6, P305

[9] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10] QUEISSER HJ, 1960, PHYS REV, V123, P1245

[1] ARMSTRONG WJ, 1966, ELECTROCHEM TECHNOL, V4, P475

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) : 604 - 607

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &

[6] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 796 - &

[7] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[8] PAVLOV PV, 1964, SOV PHYS-SOL STATE, V6, P305

[9] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10] QUEISSER HJ, 1960, PHYS REV, V123, P1245