EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN

被引：36

作者：

JACCODINE, RJ

DRUM, CM

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 01期

关键词：

D O I：

10.1063/1.1754414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：29 / +

页数：1

共 9 条

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