ARSENIC ION-IMPLANTED SHALLOW JUNCTION

被引：23

作者：

WADA, Y

HASHIMOTO, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 02期

关键词：

D O I：

10.1149/1.2129688

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：461 / 466

页数：6

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