ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA

[1] DIFFUSION MODEL FOR ARSENIC IN SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 472 - &

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[4] GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM [J]. PHYSICAL REVIEW, 1969, 180 (03): : 773 - +

[5] HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[6] THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 155 - 165

[7] JAIN RK, TO BE PUBLISHED

[8] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[9] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (02): : 335 - +

[10] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[1] DIFFUSION MODEL FOR ARSENIC IN SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 472 - &

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[4] GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM [J]. PHYSICAL REVIEW, 1969, 180 (03): : 773 - +

[5] HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[6] THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 155 - 165

[7] JAIN RK, TO BE PUBLISHED

[8] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[9] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (02): : 335 - +

[10] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2