ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA

被引：15

作者：

JAIN, RK ^{[1
]}

VANOVERSTRAETEN, RJ ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期

关键词：

D O I：

10.1149/1.2134258

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：552 / 557

页数：6

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