ARSENIC CLUSTERING IN SILICON

被引：89

作者：

SCHWENKER, RO

PAN, ES

LEVER, RF

机构：

来源：

关键词：

D O I：

10.1063/1.1660706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3195 / +

页数：1

共 13 条

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ALIOTTA, CF
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[3] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE
CHOU, S
DAVIDSON, LA
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 23 - &
[4] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION
DASH, S
JOSHI, ML
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &
[5] FISTUL VI, 1969, HEAVILY DOPED SEMICO, P245
[6] GRINSHTEIN PM, 1969, SOV PHYS SEMICOND+, V2, P1142
[7] GRINSHTEIN PM, 1969, SOV PHYS SEMICOND+, V3, P244
[8] HU SM, UNPUBLISHED
[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[10] OVENSKII VB, 1969, SOV PHYS-SOLID STATE, V11, P1064