CONCENTRATION PROFILES OF PHOSPHORUS, ARSENIC AND RECOILED OXYGEN-ATOMS IN SI BY ION-IMPLANTATION INTO SIO2-SI

被引：10

作者：

HIRAO, T ^{[1
]}

INOUE, K ^{[1
]}

YAEGASHI, Y ^{[1
]}

TAKAYANAGI, S ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 03期

关键词：

D O I：

10.1143/JJAP.18.647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The concentration profiles of phosphorus, arsenic and recoiled oxygen in Si after high dose implantations through SiO2 films have been measured using Secondary Ion Mass Spectrometry (SIMS). The characteristics such as the standard deviation or the slopes of the exponential tails of the concentration profiles of the projectiles were found to agree with those directly implanted into bare Si within experimental errors, with the exception of a shifting of the concentration peak position. The concentration level and the maximum penetration depth in Si for recoiled oxygen relative to the projectiles are discussed in correlation with ion mass, ion energy and SiO2 film thickness. © 1979 The Japan Society of Applied Physics.

引用

页码：647 / 656

页数：10

共 16 条

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