DEPTH DISTRIBUTION OF KNOCK-ON NITROGEN IN SI BY PHOSPHORUS IMPLANTATION THROUGH SI3N4 FILMS

被引：15

作者：

HIRAO, T

INOUE, K

TAKAYANAGI, S

YAEGASHI, Y

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,MORIGUCHI,OSAKA 570,JAPAN

[2] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA 569,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 08期

关键词：

D O I：

10.1063/1.89747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：505 / 508

页数：4

相关论文

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