PROFILE PARAMETERS OF IMPLANTED-DIFFUSED ARSENIC LAYERS IN SILICON

被引:20
作者
FAIR, RB [1 ]
TSAI, JCC [1 ]
机构
[1] BELL TEL LABS INC,READING,PA 19604
关键词
D O I
10.1149/1.2132883
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:583 / 586
页数:4
相关论文
共 7 条
[1]   PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON [J].
FAIR, RB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1278-&
[2]   EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].
FAIR, RB ;
WEBER, GR .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279
[3]   DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696
[4]  
FISTUL VI, 1969, HEAVILY DOPED SEMICO, P129
[5]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[6]  
JOHNSON WS, 1970, PROJECTED RANGE STAT
[7]   ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON [J].
MULLER, H ;
KRANZ, H ;
RYSSEL, H ;
SCHMID, K .
APPLIED PHYSICS, 1974, 4 (02) :115-123