SIZE EFFECT ON CONTACT RESISTANCE AND DEVICE SCALING

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1337 - 1347

[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[3] AL-0.9-PERCENT SI SI OHMIC CONTACTS TO SHALLOW JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1335 - 1338

[4] COHEN SS, 1982, MAY P ECS ANN M MONT

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] MAYER DC, 1982, DESIGN MAY, V50

[7] CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) : 1022 - &

[8] PAINCE TL, 1980, VERY LARGE SCALE INT, P76

[9] A DIRECT MEASUREMENT OF INTERFACIAL CONTACT RESISTANCE [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 294 - 296

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1337 - 1347

[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[3] AL-0.9-PERCENT SI SI OHMIC CONTACTS TO SHALLOW JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1335 - 1338

[4] COHEN SS, 1982, MAY P ECS ANN M MONT

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] MAYER DC, 1982, DESIGN MAY, V50

[7] CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) : 1022 - &

[8] PAINCE TL, 1980, VERY LARGE SCALE INT, P76

[9] A DIRECT MEASUREMENT OF INTERFACIAL CONTACT RESISTANCE [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 294 - 296