MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS

被引：42

作者：

ANDERSON, RM ^{[1
]}

REITH, TM ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA

来源：

关键词：

D O I：

10.1149/1.2134013

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1337 / 1347

页数：11

共 19 条

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[J]. APPLIED PHYSICS LETTERS, 1972, 21 (06) : 256 - &
[6] HOSACK HH, 1973, J APPL PHYS, V44, P8
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (07): : 1525 - +
[8] ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI
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[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 101 - +
[9] KOCH FB, 1970, J ELECTROCHEM SOC, V117, pC262
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