ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS

被引：477

作者：

YU, AYC

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期

关键词：

D O I：

10.1016/0038-1101(70)90056-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：239 / +

页数：1

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共 26 条

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS
ALEXANDER, MN
HOLCOMB, DF
[J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 815 - +
[2] TUNNELING SPECTROSCOPY IN GAAS
CONLEY, JW
MAHAN, GD
[J]. PHYSICAL REVIEW, 1967, 161 (03): : 681 - +
[3] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS
CONLEY, JW
DUKE, CB
MAHAN, GD
TIEMANN, JJ
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 466 - &
[4] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS
CONLEY, JW
TIEMANN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2880 - &
[5] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
[6] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &
[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[9] ELECTRICAL CONTACTS TO SILICON
HOOPER, RC
CUNNINGHAM, JA
HARPER, JG
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 831 - +
[10] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +