HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] 4.2-K OPERATION OF INALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10): : L862 - L864

[2] OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 371 - 373

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[4] LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[5] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 383 - 385

[6] SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (02) : 64 - 65

[7] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284

[8] DOUBLE-HETEROJUNCTION GAALINAS/GAINAS BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 516 - 518

[9] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 118 - 120

[10] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657

[1] 4.2-K OPERATION OF INALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10): : L862 - L864

[2] OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 371 - 373

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[4] LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[5] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 383 - 385

[6] SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (02) : 64 - 65

[7] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284

[8] DOUBLE-HETEROJUNCTION GAALINAS/GAINAS BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 516 - 518

[9] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 118 - 120

[10] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657