DOUBLE-HETEROJUNCTION GAALINAS/GAINAS BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

PELOUARD, JL ^{[1
]}

HESTO, P ^{[1
]}

PRASEUTH, JP ^{[1
]}

GOLDSTEIN, L ^{[1
]}

机构：

[1] GRP SCI BAGEUX,CNET,LAB BAGNEUS,F-92220 BAGEUX,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 09期

关键词：

D O I：

10.1109/EDL.1986.26457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：516 / 518

页数：3

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