OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE

被引：28

作者：

KAWAMURA, Y

WAKITA, K

ASAHI, H

机构：

[1] NTT, Electrical Communication Lab,, Atsugi, Jpn, NTT, Electrical Communication Lab, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 09期

关键词：

D O I：

10.1049/el:19850265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

9

引用

收藏

页码：371 / 373

页数：3

相关论文

共 9 条

[1] ASAHI H, 1984, 9TH IEEE INT SEM LAS, P82
[2] EXCITON BINDING-ENERGY IN QUANTUM WELLS
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
[3] ISHIBASHI T, 1981, I PHYS C SER, V63, P578
[4] INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
WAKITA, K
[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 459 - 460
[5] DISORDERING BY ZN-DIFFUSION OF INGAAS/INALAS MQW SUPERLATTICE STRUCTURE GROWN BY MBE
KAWAMURA, Y
ASAHI, H
KOHZEN, A
WAKITA, K
[J]. ELECTRONICS LETTERS, 1985, 21 (06) : 218 - 219
[6] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING
PEOPLE, R
WECHT, KW
ALAVI, K
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 118 - 120
[7] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
ALAVI, K
WAGNER, WR
PEARSALL, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[8] WAKITA K, 1985, ELECTRON LETT, V21, P338
[9] CALCULATION OF THE CONDUCTION-BAND DISCONTINUITY FOR GA0.47IN0.53AS-AL0.48IN0.52AS HETEROJUNCTION
WELCH, DF
WICKS, GW
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3176 - 3179