INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

KAWAMURA, Y

ASAHI, H

WAKITA, K

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 11期

关键词：

D O I：

10.1049/el:19840321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：459 / 460

页数：2

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[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] AN N-IN0.53GA0.47AS-N-INP RECTIFIER
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
[3] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING
PEOPLE, R
WECHT, KW
ALAVI, K
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 118 - 120
[4] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LASER-DIODES
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FULLER, BK
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2402 - 2405
[5] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
ALAVI, K
WAGNER, WR
PEARSALL, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[6] GA0.47IN0.53AS/INP MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING AT 1.53 MU-M
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 288 - 290
[7] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY
YANASE, T
KATO, Y
MITO, I
YAMAGUCHI, M
NISHI, K
KOBAYASHI, K
LANG, R
[J]. ELECTRONICS LETTERS, 1983, 19 (17) : 700 - 701