HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引:47
作者
NOTTENBURG, RN
CHEN, YK
PANISH, MB
HAMM, R
HUMPHREY, DA
机构
关键词
D O I
10.1109/55.17832
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:524 / 526
页数:3
相关论文
共 14 条
[1]   HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].
ASBECK, PM ;
CHANG, MF ;
WANG, KC ;
MILLER, DL ;
SULLIVAN, GJ ;
SHENG, NH ;
SOVERO, E ;
HIGGINS, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2571-2579
[2]   GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].
CHANG, MF ;
ASBECK, PM ;
MILLER, DL ;
WANG, KC .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10
[3]   SUBMICROMETER FULLY SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
HAYAMA, N ;
OKAMOTO, A ;
MADIHIAN, M ;
HONJO, K .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :246-248
[4]   TWO-DIMENSIONAL ANALYSIS OF EMITTER-SIZE EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS [J].
HIRAOKA, YS ;
YOSHIDA, J ;
AZUMA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :721-725
[5]   HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ISHIBASHI, T ;
YAMAUCHI, Y ;
NAKAJIMA, O ;
NAGATA, K ;
ITO, H .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :194-196
[6]   A 30-PS SI BIPOLAR IC USING SUPER SELF-ALIGNED PROCESS TECHNOLOGY [J].
KONAKA, S ;
YAMAMOTO, Y ;
SAKAI, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :526-531
[7]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25
[8]   NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].
LEVI, AFJ ;
YAFET, Y .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44
[9]  
NAGATA K, 1987, IEEE T ELECTRON DEVI, V35, P2
[10]   EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
NAKAJIMA, O ;
NAGATA, K ;
ITO, H ;
ISHIBASHI, T ;
SUGETA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598