HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[2] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[3] MORIZUKA K, 1986, 44TH DEV RES C

[4] NAGATA K, 1986, I PHYS C SER, V79, P589

[5] IMPROVEMENT IN AIGAAS/GAAS HBT POWER GAINS WITH BURIED PROTON-IMPLANTED LAYER [J]. ELECTRONICS LETTERS, 1986, 22 (25) : 1317 - 1318

[6] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[7] NAKAJIMA O, 1985, JPN J APPL PHYS, V24, P1372

[8] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657

[1] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[2] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[3] MORIZUKA K, 1986, 44TH DEV RES C

[4] NAGATA K, 1986, I PHYS C SER, V79, P589

[5] IMPROVEMENT IN AIGAAS/GAAS HBT POWER GAINS WITH BURIED PROTON-IMPLANTED LAYER [J]. ELECTRONICS LETTERS, 1986, 22 (25) : 1317 - 1318

[6] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[7] NAKAJIMA O, 1985, JPN J APPL PHYS, V24, P1372

[8] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657