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HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SIGE BASE GROWN BY MOLECULAR-BEAM EPITAXY

被引：46
作者：
PRUIJMBOOM, A
SLOTBOOM, JW
GRAVESTEIJN, DJ
FREDRIKSZ, CW
VANGORKUM, AA
VANDEHEUVEL, RA
VANROOIJMULDER, JML
STREUTKER, G
VANDEWALLE, GFA
机构：
[1] Philips Research Laboratories, 5600 JA, Eindhoven
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期
关键词：
D O I：
10.1109/55.103606
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality SiGe heterojunction bipolar transistors (HBT's) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic barriers in the conduction band varied over the wafer, and the influence of these barriers on collector current, Early voltage, and cutoff frequency was studied by experiments and simulations. Temperature-dependent measurements were performed to study the influence of the barriers on the effective bandgap narrowing in the base and to obtain an expression for the collector-current enhancement.
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页码：357 / 359
页数：3
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