BORON DOPING OF SI-GE BASE OF HETEROBIPOLAR TRANSISTORS

被引：10

作者：

KIBBEL, H ^{[1
]}

KASPER, E ^{[1
]}

NAROZNY, P ^{[1
]}

SCHREIBER, HU ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,W-4630 BOCHUM,GERMANY

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90410-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The base of heterobipolar transistor can be doped to much higher levels than can the base of the homojunction transistor. We describe the principle, operation and effusion properties of a home-made boron source for p-type doping of the SiGe base of the heterobipolar transistor. Transistors fabricated from the material grown by molecular beam epitaxy, with a boron-doped base, exhibit good d.c. characteristics. A current gain of βmax = 1000 could be obtained with 1018cm-3 base doping. © 1990.

引用

页码：163 / 170

页数：8

共 8 条

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