P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] BEAN JC, 1981, IMPURITY DOPING PROC

[3] BEAN JC, 1977, INT ELECTRON DEVICES, P6

[4] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[5] EHRSTEIN JR, 1973, NONDESTRUCTIVE EVALU, P1

[6] ISHIZAKA A, 1982, C MBE CLEAN SURFACE, P183

[7] KONIG U, COMMUNICATION

[8] ON BAKING A CRYOPUMPED UHV SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04): : 1872 - 1873

[9] MORIN FJ, 1954, PHYS REV, V94, P724

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] BEAN JC, 1981, IMPURITY DOPING PROC

[3] BEAN JC, 1977, INT ELECTRON DEVICES, P6

[4] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[5] EHRSTEIN JR, 1973, NONDESTRUCTIVE EVALU, P1

[6] ISHIZAKA A, 1982, C MBE CLEAN SURFACE, P183

[7] KONIG U, COMMUNICATION

[8] ON BAKING A CRYOPUMPED UHV SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04): : 1872 - 1873

[9] MORIN FJ, 1954, PHYS REV, V94, P724

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3