SI/GE0.3SI0.7/SI HETEROJUNCTION BIPOLAR-TRANSISTOR MADE WITH SI MOLECULAR-BEAM EPITAXY

被引：105

作者：

TATSUMI, T

HIRAYAMA, H

AIZAKI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：895 / 897

页数：3

共 12 条

[1]

AIZAKI N, 1985, 1ST P INT S SI MBE, P133

[2]

BEAN JC, 1984, J VAC SCI TECHNOL, V2, P430

[3] ELECTRICAL MEASUREMENTS ON MBE GROWN SI/SI1-XGEX HETEROJUNCTIONS [J].

DENHOFF, MW ;

BARIBEAU, JM ;

HOUGHTON, DC ;

RAJAN, K .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :445-450

[4]

GHANNAM M, 1984, 1984 INT EL DEV M, P746

[5] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[6]

PEOPLE R, 1984, APPL PHYS LETT, V45, P1251

[7]

SASAKI K, 1985, 1985 IEDM WASH, P294

[8]

SASAKI K, 1987, 19 C SOL STAT DEV MA, P335

[9]

SUGII T, 1986, VLSI TECHNOL, P45

[10] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF STEP-BAND FORMATION ON GEXSI1-X(111) VICINAL SURFACES [J].

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :776-778

← 1 2 →