ELECTRICAL MEASUREMENTS ON MBE GROWN SI/SI1-XGEX HETEROJUNCTIONS

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] BARIBEAU JM, IN PRESS SEMICONDUCT

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[4] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[5] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[6] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638

[7] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[8] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 551 - 561

[9] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[10] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] BARIBEAU JM, IN PRESS SEMICONDUCT

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[4] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[5] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[6] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638

[7] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[8] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 551 - 561

[9] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[10] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845