CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF STEP-BAND FORMATION ON GEXSI1-X(111) VICINAL SURFACES

被引：2

作者：

TATSUMI, T

AIZAKI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 13期

关键词：

D O I：

10.1063/1.97544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：776 / 778

页数：3

共 8 条

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[6] SCALING PRINCIPLE FOR HETEROJUNCTION BIPOLAR INTEGRATED-CIRCUIT [J].

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[7]

SAKAMOTO T, 1985, 46TH M JAP SOC APPL, P648

[8] ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY IN MOLECULAR-BEAM EPITAXIAL SILICON FILMS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L227-L229

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