ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY IN MOLECULAR-BEAM EPITAXIAL SILICON FILMS

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] GROWTH OF AN OXIDE FILM ON A CLEAN SILICON SURFACE AND KINETICS OF ITS EVAPORATION [J]. THIN SOLID FILMS, 1976, 32 (02) : 247 - 249

[4] IIJIMA M, 1977, Patent No. 12063

[5] ISHIZAKA A, 1983, 1983 P MBECST2 TOK, P183

[6] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[7] PEARCE CW, 1981, ELECTROCHEMICAL SOC, P705

[8] UV OZONE CLEANING OF SILICON SUBSTRATES IN SILICON MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1073 - 1075

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] GROWTH OF AN OXIDE FILM ON A CLEAN SILICON SURFACE AND KINETICS OF ITS EVAPORATION [J]. THIN SOLID FILMS, 1976, 32 (02) : 247 - 249

[4] IIJIMA M, 1977, Patent No. 12063

[5] ISHIZAKA A, 1983, 1983 P MBECST2 TOK, P183

[6] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[7] PEARCE CW, 1981, ELECTROCHEMICAL SOC, P705

[8] UV OZONE CLEANING OF SILICON SUBSTRATES IN SILICON MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1073 - 1075