GROWTH OF AN OXIDE FILM ON A CLEAN SILICON SURFACE AND KINETICS OF ITS EVAPORATION

被引：21

作者：

FRANTSUZOV, AA ^{[1
]}

MAKRUSHIN, II ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK 630090,USSR

来源：

THIN SOLID FILMS | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0040-6090(76)90305-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / 249

页数：3

共 10 条

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[2]

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COMAS, J .

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[4]

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[5]

FRANTSUZOV AA, 1975, ZH TEKH FIZ+, V45, P600

[6] TEMPERATURE-DEPENDENCE OF OXIDATION RATE IN CLEAN GE (111) [J].

FRANTSUZOV, AA ;

MAKRUSHIN, NI .

SURFACE SCIENCE, 1973, 40 (02) :320-342

[7]

GUDMAN AM, 1970, J ELECTROCHEM SOC, V117, P982

[8] INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY [J].

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NEAVE, JH .

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[9]

SHLIER RE, 1959, J CHEM PHYS, V30, P917

[10]

VANDERME.YJ, 1972, J ELECTROCHEM SOC, V119, P530

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