SCALING PRINCIPLE FOR HETEROJUNCTION BIPOLAR INTEGRATED-CIRCUIT

被引：6

作者：

OHTA, K

机构：

[1] NEC, Fundamental Research Lab,, Kawasaki, Jpn, NEC, Fundamental Research Lab, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 12期

关键词：

D O I：

10.1143/JJAP.23.L913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

INTEGRATED CIRCUITS

引用

页码：L913 / L915

页数：3

共 11 条

BAILBE, JP ;

MARTY, A ;

HIEP, PH ;

REY, GE .

[2]

DENNARD RH, 1974, SC, V14, P247

[3] COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI [J].

EDEN, RC .

[4]

GONDA S, 1984, HANDOTAI CHOHKOHSHI, P91

[5]

ITO H, 1984, 16TH INT C SOL STAT, P351

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

[7]

OHTA K, UNPUB

[8]

Sasaki A., 1984, Oyo Buturi, V53, P579

[9] A COMPARISON OF SEMICONDUCTOR-DEVICES FOR HIGH-SPEED LOGIC [J].

SOLOMON, PM .

[10]

TANG D, 1979, INT SOLID STATE CIRC, P86