GEXSI1-X STRAINED-LAYER HETEROSTRUCTURE BIPOLAR-TRANSISTORS

[1] SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 444 - 451

[2] BEAN JC, 1987, J CRYST GROWTH, V411, P81

[3] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335

[4] OBSERVATION OF BLOCH CONDUCTION PERPENDICULAR TO INTERFACES IN A SUPERLATTICE BIPOLAR-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1260 - 1262

[5] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 330 - 332

[6] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 308 - 310

[7] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 538 - 540

[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 963 - 965

[9] GE0.6SI0.4 RIB WAVE-GUIDE AVALANCHE PHOTODETECTORS FOR 1.3-MU-M OPERATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 809 - 811

[10] WEBB PP, 1974, RCA REV, V35, P234

[1] SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 444 - 451

[2] BEAN JC, 1987, J CRYST GROWTH, V411, P81

[3] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335

[4] OBSERVATION OF BLOCH CONDUCTION PERPENDICULAR TO INTERFACES IN A SUPERLATTICE BIPOLAR-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1260 - 1262

[5] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 330 - 332

[6] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 308 - 310

[7] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 538 - 540

[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 963 - 965

[9] GE0.6SI0.4 RIB WAVE-GUIDE AVALANCHE PHOTODETECTORS FOR 1.3-MU-M OPERATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 809 - 811

[10] WEBB PP, 1974, RCA REV, V35, P234