ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS

[1] Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] DAEMBKES H, 1985, DEC IEDM, P768

[4] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[5] DIRECT-COUPLED GAAS RING OSCILLATORS WITH SELF-ALIGNED GATES [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 325 - 326

[6] NAGEL LW, 1980, 1980 P INT S CIRC SY

[7] TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 529 - 544

[8] PEARSALL TP, 1985, 1ST P INT S SIL MOL, P400

[9] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1231 - 1233

[1] Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] DAEMBKES H, 1985, DEC IEDM, P768

[4] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[5] DIRECT-COUPLED GAAS RING OSCILLATORS WITH SELF-ALIGNED GATES [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 325 - 326

[6] NAGEL LW, 1980, 1980 P INT S CIRC SY

[7] TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 529 - 544

[8] PEARSALL TP, 1985, 1ST P INT S SIL MOL, P400

[9] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1231 - 1233