TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS

被引：15

作者：

PEARSALL, TP

机构：

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90360-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：529 / 544

页数：16

共 36 条

[1]

Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[2] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M [J].

ALAVI, K ;

PEARSALL, TP ;

FORREST, SR ;

CHO, AY .

ELECTRONICS LETTERS, 1983, 19 (06) :227-229

[3] TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES [J].

BRUMMELL, MA ;

NICHOLAS, RJ ;

PORTAL, JC ;

RAZEGHI, M ;

POISSON, MA .

PHYSICA B & C, 1983, 117 (MAR) :753-755

[4] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J].

CAPPY, A ;

CARNEZ, B ;

FAUQUEMBERGUES, R ;

SALMER, G ;

CONSTANT, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2158-2160

[5] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J].

CHEN, CY ;

CHO, AY ;

CHENG, KY ;

PEARSALL, TP ;

OCONNOR, P ;

GARBINSKI, PA .

ELECTRON DEVICE LETTERS, 1982, 3 (06) :152-155

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[7]

CHENG KY, 1982, APPL PHYS LETT, V40, P429

[8]

CHENG LL, 1974, APPL PHYS LETT, V24, P593

[9]

DILORENZO JV, 1982, 1982 INT EL DEV M, P578

[10] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DINGLE, R ;

WIEGMANN, W ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

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