DIRECT-COUPLED GAAS RING OSCILLATORS WITH SELF-ALIGNED GATES

[1] CHAN WK, 1981, ELECTROCHEMICAL SOCI, P813

[2] Cox H. M., 1980, Semi-Insulating III-V Materials, P41

[3] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 299 - 317

[4] OPTIMIZATION OF LOW-NOISE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1034 - 1037

[5] FABRICATION TECHNOLOGY FOR AN 80-PS NORMALLY-OFF GAAS-MESFET LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 489 - 493

[6] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[7] BELOW 20 PS GATE OPERATION WITH GAAS SAINT FETS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 592 - 593

[1] CHAN WK, 1981, ELECTROCHEMICAL SOCI, P813

[2] Cox H. M., 1980, Semi-Insulating III-V Materials, P41

[3] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 299 - 317

[4] OPTIMIZATION OF LOW-NOISE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1034 - 1037

[5] FABRICATION TECHNOLOGY FOR AN 80-PS NORMALLY-OFF GAAS-MESFET LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 489 - 493

[6] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 485 - 496

[7] BELOW 20 PS GATE OPERATION WITH GAAS SAINT FETS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 592 - 593