SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION

[1] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[6] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[7] BEAN JC, 1982, J PHYS-PARIS, V43, P153, DOI 10.1051/jphyscol:1982519

[8] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[9] BEAN JC, 1981, IMPURITY DOPING PROC, pCH4

[10] BEAN JC, 1984, UNPUB 1984 P FALL S

[1] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[6] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[7] BEAN JC, 1982, J PHYS-PARIS, V43, P153, DOI 10.1051/jphyscol:1982519

[8] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[9] BEAN JC, 1981, IMPURITY DOPING PROC, pCH4

[10] BEAN JC, 1984, UNPUB 1984 P FALL S