DOPING BY SECONDARY IMPLANTATION

被引：34

作者：

JORKE, H

KIBBEL, H

机构：

[1] AEG Research Cent Ulm, Ulm, West Ger, AEG Research Cent Ulm, Ulm, West Ger

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

10.1149/1.2108674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：774 / 778

页数：5

共 34 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].

BEAN, JC ;

SADOWSKI, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142

[3] SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION [J].

BEAN, JC .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :444-451

[4] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J].

BECKER, GE ;

BEAN, JC .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3395-3399

[5]

CARTER G, 1968, ION BOMBARDEMENT SOL

[6]

CASEL A, UNPUB

[7] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[8]

Daembkes H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P768

[9] CLASSICAL CALCULATION OF DIFFERENTIAL CROSS SECTION FOR SCATTERING FROM A COULOMB POTENTIAL WITH EXPONENTIAL SCREENING [J].

EVERHART, E ;

STONE, G ;

CARBONE, RJ .

PHYSICAL REVIEW, 1955, 99 (04) :1287-1290

[10] LOW-DOSE DEPTH DISTRIBUTION OF RECOIL IMPLANTED ATOMS [J].

FALCONE, G ;

OLIVA, A .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :41-43

← 1 2 3 4 →