MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS

被引：17

作者：

KOJIMA, N

SATO, K

BUDIMAN, M

YAMADA, A

KONAGAI, M

TAKAHASHI, K

NAKAMURA, Y

NITTONO, O

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN

[2] TOKYO INST TECHNOL,DEPT MET ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80124-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have successfully grown GaSe films on (001)GaAs by molecular beam epitaxy (MBE). Each unit layer of GaSe was grown toward the two directions on (001)GaAs, while the epitaxial GaSe films whose c-axis inclined toward the only one direction were obtained by using slightly misoriented (001)GaAs. Furthermore, we characterized the interface between epitaxial GaSe and misoriented (001)GaAs by transmission electron microscopy (TEM), and it was found that the GaSe layers were grown along the {111} plane in the intermediate region of 0.7 nm from the interface and that the obtained film was arranged in gamma-type.

引用

页码：1175 / 1179

页数：5

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