HETEROEPITAXIAL GROWTH OF LAYERED GASE FILMS ON GAAS(001) SURFACES

被引：14

作者：

ABE, H

UENO, K

SAIKI, K

KOMA, A

机构：

[1] Department of Chemistry, The University of Tokyo, Bunkyo-ku Tokyo, 113

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10A期

关键词：

GASE; GAAS(001); HETEROEPITAXIAL GROWTH; RHEED; SE IRRADIATION; ALPHA-GA2SE3; FACET ARRAY;

D O I：

10.1143/JJAP.32.L1444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of layered GaSe with (0001) surfaces have been grown on GaAs(001) substrates in spite of the large difference in their crystal symmetry. In situ observation of reflection high-energy electron diffraction has revealed that a number of facets grow on the surface of GaAs(001) under Se irradiation. The existence of those facets is essential to the single-domain growth of a layered GaSe film on a GaAs(001) surface.

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收藏

页码：L1444 / L1447

页数：4

相关论文

共 11 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF INSE AND GASE LAYERED COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

EMERY, JY ;

BRAHIMOSTMANE, L ;

HIRLIMANN, C ;

CHEVY, A .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3256-3259

[2]

Hahn H., 1949, Z ANORG CHEM, V259, P135

[3] MOLECULAR-BEAM-EPITAXIAL GROWTH OF III-VI LAYERED SEMICONDUCTOR GASE ON AMORPHOUS SIO2 [J].

KAMBE, N .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2697-2699

[4] VANDERWAALS EPITAXY - A NEW EPITAXIAL-GROWTH METHOD FOR A HIGHLY LATTICE-MISMATCHED SYSTEM [J].

KOMA, A .

THIN SOLID FILMS, 1992, 216 (01) :72-76

[5] FABRICATION OF ULTRATHIN HETEROSTRUCTURES WITH VANDERWAALS EPITAXY [J].

KOMA, A ;

SUNOUCHI, K ;

MIYAJIMA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :724-724

[6]

KOMA A, 1985, 17TH P INT C PHYS SE, P1465

[7] COMBINED RHEED-AES STUDY OF THE THERMAL-TREATMENT OF (001) GAAS SURFACE PRIOR TO MBE GROWTH [J].

LAURENCE, G ;

SIMONDET, F ;

SAGET, P .

APPLIED PHYSICS, 1979, 19 (01) :63-70

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION SPECTROSCOPY STUDY OF GAAS(001) SURFACE MODIFIED BY SE ADSORPTION [J].

TAKATANI, S ;

KIKAWA, T ;

NAKAZAWA, M .

PHYSICAL REVIEW B, 1992, 45 (15) :8498-8505

[9] EVIDENCE OF GA2SE3-RELATED COMPOUNDS ON SE-STABILIZED GAAS-SURFACES [J].

TAKATANI, S ;

NAKANO, A ;

OGATA, K ;

KIKAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B) :L458-L460

[10] HETEROEPITAXY OF LAYERED SEMICONDUCTOR GASE ON A GAAS(111)B SURFACE [J].

UENO, K ;

ABE, H ;

SAIKI, K ;

KOMA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (8A) :L1352-L1354