EVIDENCE OF GA2SE3-RELATED COMPOUNDS ON SE-STABILIZED GAAS-SURFACES

被引：29

作者：

TAKATANI, S ^{[1
]}

NAKANO, A ^{[1
]}

OGATA, K ^{[1
]}

KIKAWA, T ^{[1
]}

机构：

[1] HITACHI LTD,PRODUCT ENGN RES LAB,TOTSUKA KU,YOKOHAMA 244,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期

关键词：

GAAS; SURFACE; SE; GA2SE3; EXAFS;

D O I：

10.1143/JJAP.31.L458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Se-stabilized GaAs(001) surface is examined by extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows components due not only to the first but also the second nearest neighbors, indicating that the Se atoms are incorporated into ordered atomic arrangements. Comparing the interatomic distances to those measured for Ga2Se3 and GaSe, it is concluded that the nature of the surface compound on the Se-stabilized GaAs surface is close to that of Ga2Se3.

引用

页码：L458 / L460

页数：3

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