STRUCTURE OF THE ZNSE/GAAS HETEROEPITAXIAL INTERFACE

被引：91

作者：

LI, D ^{[1
]}

GONSALVES, JM ^{[1
]}

OTSUKA, N ^{[1
]}

QIU, J ^{[1
]}

KOBAYASHI, M ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

引用

页码：449 / 451

页数：3

共 12 条

[1] [Anonymous], 1973, SELECTED VALUES THER
[2] Belova E K, 1965, IAN SSSR NEORG MATER, V1, P1883
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB CDTE HETEROJUNCTIONS FOR MULTILAYER STRUCTURES
GOLDING, TD
MARTINKA, M
DINAN, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1873 - 1877
[4] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS
GUNSHOR, RL
KOLODZIEJSKI, LA
MELLOCH, MR
VAZIRI, M
CHOI, C
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 200 - 202
[5] Hahn H., 1949, Z ANORG CHEM, V259, P135
[6] HARTMAN H, 1981, CURRENT TOPICS MATER, V9
[7] INSB-CDTE INTERFACES - A COMBINED STUDY BY SOFT-X-RAY PHOTOEMISSION, LOW-ENERGY ELECTRON-DIFFRACTION, AND RAMAN-SPECTROSCOPY
MACKEY, KJ
ZAHN, DRT
ALLEN, PMG
WILLIAMS, RH
RICHTER, W
WILLIAMS, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1233 - 1238
[8] Mills K.C., 1974, THERMODYNAMIC DATA I
[9] LOW INTERFACE STATE DENSITY AT AN EPITAXIAL ZNSE EPITAXIAL GAAS INTERFACE
QIAN, QD
QIU, J
MELLOCH, MR
COOPER, JA
KOLODZIEJSKI, LA
KOBAYASHI, M
GUNSHOR, RL
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1359 - 1361
[10] INFLUENCE OF GAAS SURFACE STOICHIOMETRY ON THE INTERFACE STATE DENSITY OF AS-GROWN EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES
QIU, J
QIAN, QD
GUNSHOR, RL
KOBAYASHI, M
MENKE, DR
LI, D
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1272 - 1274

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