NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS

被引:97
作者
GUNSHOR, RL
KOLODZIEJSKI, LA
MELLOCH, MR
VAZIRI, M
CHOI, C
OTSUKA, N
机构
关键词
D O I
10.1063/1.98247
中图分类号
O59 [应用物理学];
学科分类号
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页码:200 / 202
页数:3
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共 14 条
[1]   DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS [J].
BLACHA, A ;
PRESTING, H ;
CARDONA, M .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01) :11-36
[2]   PHOTOLUMINESCENCE SPECTRA OF HIGH-PURITY ZINC SELENIDE SINGLE-CRYSTALS [J].
ISSHIKI, M ;
YOSHIDA, T ;
IGAKI, K ;
UCHIDA, W ;
SUTO, S .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :162-166
[3]   ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES [J].
JOYCE, BA ;
NEAVE, JH ;
DOBSON, PJ ;
LARSEN, PK .
PHYSICAL REVIEW B, 1984, 29 (02) :814-819
[4]   MOLECULAR-BEAM EPITAXY OF CD1-XMNXTE [J].
KOLODZIEJSKI, LA ;
SAKAMOTO, T ;
GUNSHOR, RL ;
DATTA, S .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :799-801
[5]   WIDE GAP II-VI-SUPERLATTICES OF ZNSE-ZN1-XMNXSE [J].
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
BONSETT, TC ;
VENKATASUBRAMANIAN, R ;
DATTA, S ;
BYLSMA, RB ;
BECKER, WM ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :169-171
[6]  
KOLODZIEJSKI LA, 1986, APR MAT RES SOC S CO
[7]  
KOLODZIEJSKI LA, 1986, 4 INT C MOL BEAM EP
[8]   RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].
LEWIS, BF ;
LEE, TC ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
FERNANDEZ, R ;
MASERJIAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424
[9]   SURFACE-STRUCTURES AND PROPERTIES OF ZNSE GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY [J].
PARK, RM ;
SALANSKY, NM .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :249-251
[10]  
PRICE GL, 1982, 2ND INT S MOL BEAM E, P259