EFFECTS OF ATOMIC CHLORINE WALL RECOMBINATION - COMPARISON OF A PLASMA CHEMISTRY MODEL WITH EXPERIMENT

被引:41
作者
MEEKS, E [1 ]
SHON, JW [1 ]
RA, Y [1 ]
JONES, P [1 ]
机构
[1] LAM RES CORP,FREMONT,CA 94538
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 06期
关键词
D O I
10.1116/1.579608
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Results from a plasma chemistry model provide predictions of spatially and temporally averaged plasma properties. Application of the model to chlorine-etch process conditions, typical of a high plasma-density transformer coupled plasma reactor, provides plasma composition dependence on reactor operating parameter such as power and pressure. Model results also show the dependence of species concentrations on the atomic-chlorine recombination rate at reactor walls. Comparison of model predictions to measured composition trends as determined by Langmuir probe, actinometry, and ion-energy analysis reveals a critical wall-recombination probability of about 0.1 for chlorine atoms on a chlorinated anodized-aluminum surface. Ar or above this critical value, the model reproduces the experimentally observed trends, while employing a recombination probability below this value results in predictions that are inconsistent with the data. The model determines gas-phase and surface-species compositions in plasma-etch reactors through the solution of species, mass. electron-energy, and surface-site conservation equations. The use of well mixed reactor approximations reduces the computational expense of detailed kinetics calculations and allows investigation into the dependence of plasma chemistry on uncertain kinetic parameters. The dominance of surface reaction rates in determining plasma properties is expected to be equally important in more complex two-dimensional inductively coupled plasma models due to the highly diffuse nature of these low-pressure reactors. (C) 1995 American Vacuum Society.
引用
收藏
页码:2884 / 2889
页数:6
相关论文
共 22 条
[1]   BOUNDARIES AND PROBES IN ELECTRONEGATIVE PLASMAS [J].
BRAITHWAITE, NS ;
ALLEN, JE .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (12) :1733-1737
[2]  
BROWN RA, 1980, NEW METHODS NONLINEA, P289
[3]   IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2/O2 MIXTURES [J].
CHENG, CC ;
GUINN, KV ;
DONNELLY, VM ;
HERMAN, IP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05) :2630-2640
[4]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[5]   SURFACE CHEMKIN - A GENERAL FORMALISM AND SOFTWARE FOR ANALYZING HETEROGENEOUS CHEMICAL-KINETICS AT A GAS-SURFACE INTERFACE [J].
COLTRIN, ME ;
KEE, RJ ;
RUPLEY, FM .
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1991, 23 (12) :1111-1128
[6]  
COLTRIN ME, 1991, SAND908003C SAND NAT
[7]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839
[8]   FACTORS AFFECTING THE CL ATOM DENSITY IN A CHLORINE DISCHARGE [J].
DESHMUKH, SC ;
ECONOMOU, DJ .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) :4597-4607
[9]   KINETIC MODELING AND SENSITIVITY ANALYSIS OF NITROGEN-OXIDE FORMATION IN WELL-STIRRED REACTORS [J].
GLARBORG, P ;
MILLER, JA ;
KEE, RJ .
COMBUSTION AND FLAME, 1986, 65 (02) :177-202
[10]  
Grady DE, 1991, SAND911474C