BARRIER BEHAVIOR OF PLASMA-DEPOSITED SILICON-OXIDE AND NITRIDE AGAINST CU DIFFUSION

被引：16

作者：

VOGT, M

DRESCHER, K

机构：

[1] Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00135-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Various plasma deposited dielectric films have been studied for their stability against copper diffusion. The copper/dielectric interaction was characterized by Rutherford back scattering (RBS), Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) after stressing the samples thermally. Electrical measurements were performed on MIS structures to study the barrier properties of dielectrics. Therefore, I-V, I-t and C-V characteristics after different bias thermal stress (BTS) conditions were compared to those of unstressed Si/dielectric/Cu capacitors. All films investigated showed no interaction with copper during a heat treatment of 500 degrees C for 1 h. However, if an electric field is applied simultaneously to the sample annealing the properties of silicon oxide degrades drastically while silicon oxynitrides and silicon nitride were much less influenced by BTS.

引用

页码：303 / 307

页数：5

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